杭州晶驰机电有限公司

Hangzhou Jingchi Electromechanical Co., Ltd.

  杭州晶驰机电有限公司

杭州晶驰机电有限公司（品牌：晶驰 JINGCHI）成立于 2021 年 7 月，总部及研发中心位于杭州市萧山区浙江大学杭州国际科创中心，下设 2 家子公司，合计厂房面积约 10000 平方米。公司专注于第三、四代半导体材料设备研发制造，是集研发、生产、销售与服务于一体的科技型企业。

主营产品涵盖碳化硅粉料合成炉、晶体生长炉、晶片外延炉、热压炉、退火炉、和晶片腐蚀清洗设备以及金刚石微波等离子体沉积设备。

在主营设备之外，公司依托三轴加工中心与数控车床，承接各类精密机械零部件代加工，按客户图纸提供从方案到成品的车铣一体化加工服务，广泛配套半导体晶体生长、真空腔体、光机电仪器及自动化设备等领域。

Hangzhou Jingchi Electromechanical Co., Ltd. (Brand: JINGCHI) was founded in July 2021. Its headquarters and R&D center are located at Zhejiang University Hangzhou International Innovation Center in Xiaoshan District, Hangzhou. The company has two subsidiaries with a total factory area of approximately 10,000 square meters. Focused on the R&D and manufacturing of 3rd and 4th-generation semiconductor material equipment, it is a technology enterprise integrating R&D, production, sales and after-sales service.

Our main products include silicon carbide powder synthesis furnaces, crystal growth furnaces, wafer epitaxy furnaces, hot pressing furnaces, annealing furnaces, wafer etching & cleaning equipment, and diamond microwave plasma deposition equipment.

Beyond our core equipment business, equipped with 3-axis machining centers and CNC lathes, we undertake OEM processing of various precision mechanical components. We provide integrated turning and milling services from solution design to finished products according to customer drawings. Our components are widely applied in semiconductor crystal growth, vacuum chambers, opto-mechatronic instruments and automated equipment.

目前公司产品包括6英寸水平进气和8英寸垂直进气碳化硅外延设备（LPCVD法），金刚石晶体生长设备（MPCVD法），氮化铝晶体生长设备，碳化硅源粉合成炉，碳化硅晶体生长设备（PVT法），氧化镓单晶生长炉（导模法、CZ法），各种晶体和晶片热处理炉。  

公司拥有一支由国内知名专家教授领衔的技术研发及顾问团队，具有国内一流的自主研发创新能力，技术研发水平处于国内领先地位。公司牢固树立人力资源为第一资源的理念，秉承“尊重人才价值、塑造人才品质、致力人才成长”的宗旨，以人为本、同心同向，实现公司与员工的共同发展。

At present, the company's products include 6-inch horizontal intake and 8-inch vertical intake silicon carbide epitaxial equipment (LPCVD method), diamond crystal growth equipment (MPCVD method), aluminum nitride crystal growth equipment, silicon carbide source powder synthesis furnace, silicon carbide crystal growth equipment (PVT method), gallium oxide single crystal growth furnace (guide mode method, CZ method), Various crystal and wafer heat treatment furnaces.

The company has a technology research and development and consulting team led by well-known domestic experts and professors, with domestic first-class independent research and innovation capabilities, technology research and development level in the leading position in China. The company firmly establishes the concept of human resources as the first resource, adhering to the purpose of "respecting the value of talents, shaping the quality of talents, and committing to the growth of talents", people-oriented, concentric, and achieve the common development of the company and employees.